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2SD1418
Silicon NPN Epitaxial
REJ03G0787-0200 (Previous ADE-208-1149) Rev.2.00 Aug.10.2005
Application
* Low frequency power amplifier * Complementary pair with 2SB1025
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
4
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current iC(peak)*1 Collector power dissipation PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 120 80 5 1 2 1 150 -55 to +150 Unit V V V A A W C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1418
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol Min V(BR)CBO 120 V(BR)CEO 80 V(BR)EBO 5 ICBO -- hFE1*1 60 hFE2 30 Collector to emitter saturation voltage VCE(sat) -- Base to emitter voltage VBE -- Gain bandwidth product fT -- Collector output capacitance Cob -- Notes: 1. The 2SD1418 is grouped by hFE1 as follows. 2. Pulse test Mark DA DB DC hFE1 60 to 120 100 to 200 160 to 320 Typ -- -- -- -- -- -- -- -- 140 12 Max -- -- -- 10 320 -- 1 1.5 -- -- Unit V V V A Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 500 mA*2 IC = 500 mA, IB = 50 mA*2 VCE = 5 V, IC = 150 mA*2 VCE = 5 V, IC = 150 mA*2 VCB = 10 V, IE = 0, f = 1 MHz
V V MHz pF
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1418
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (W) (on the alumina ceramic board)
1.2 1.0
Typical Output Characteristics
35 30 25 20 15 10 5 0.4 2 1 0.5 mA IB = 0
Collector Current IC (A)
50 100 150
0.8
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
500 VCE = 5 V
DC Current Transfer Ratio vs. Collector Current
300 VCE = 5 V 250 200 150 100 50 0
Ta = 75 25 -25 C
Collector Current IC (mA)
200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0
Ta = 75 C 25 -2 5
DC Current Transfer Ratio hFE
1
3
10
30
100
300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product fT (MHz)
1.2 1.0 0.8
V BE(sat)
Gain Bandwidth Product vs. Collector Current
240 200 160 120 80 40 0 10 VCE = 5 V Pulse
0.6 IC = 10 IB Pulse 0.5 0.4 0.3 0.2 0.1 VCE(sat) 0 1,000
0.6 0.4 0.2 0 1 3 10 30 100 300
30
100
300
1,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD1418
Collector Output Capacitance vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF)
200 100 50 f = 1 MHz IE = 0
20 10 5
2 1 2 5 10 20 50 100
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD1418
Package Dimensions
JEITA Package Code SC-62 RENESAS Code
PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g
Unit: mm
4.5 0.1
1.5 1.5 3.0
Ordering Information
Part Name 2SD1418DATR-E 2SD1418DBTR-E 2SD1418DCTR-E 1000 Quantity Shipping Container 178 mm Reel, 12 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
0.8 Min
0.44 Max
(0.4)
0.53 Max 0.48 Max
(2.5)
1
2.5 0.1 4.25 Max
0.4
1.8 Max
1.5 0.1 0.44 Max
(1.5)
(0.2)
Sales Strategic Planning Div.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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